Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-30
2006-05-30
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000
Reexamination Certificate
active
07053441
ABSTRACT:
A nonvolatile semiconductor memory device having a small layout area includes a memory cell array in which a plurality of memory cells are arranged in a row direction and a column direction. The memory cell array includes: source line diffusion layers each of which is formed by connecting part of the memory cells in the row direction; bitline diffusion layers, isolation regions each of which divides one of the bitline diffusion layers, and word gate common connection sections. Each of the memory cells includes a word gate and a select gate. Each of the bitline diffusion layers is disposed between two of the word gates which are adjacent to each other in the column direction. Each of the word gate common connection sections connects the two adjacent word gates above the isolation regions.
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Oliff & Berridg,e PLC
Pham Hoai
Seiko Epson Corporation
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