Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2006-05-16

2006-05-16

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S391000

Reexamination Certificate

active

07045866

ABSTRACT:
This invention offers a ROM in which a user can program his digital data. In a memory cell array of the ROM, in which a plurality of interlayer insulation layers and a plurality of metal layers (including a bit line which makes an uppermost layer) are alternately stacked over each memory transistor, an insulation layer is formed on a tungsten plug in a first contact hole provided in a first interlayer insulation layer. The ROM is programmed by writing digital data “1” or “0” in each of the memory transistors according to whether a dielectric breakdown of the insulation layer is caused by a predetermined programming voltage (high voltage) applied from the bit line.

REFERENCES:
patent: 5917224 (1999-06-01), Zangara
patent: 2003-114247 (2003-04-01), None

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