Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2006-05-02

2006-05-02

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257S321000, C257S324000

Reexamination Certificate

active

07038268

ABSTRACT:
In a nonvolatile semiconductor storage device which is electrically writable and erasable, a silicon substrate, a plurality of element isolation portions which project from the silicon substrate and are disposed at a predetermined interval, floating electrodes disposed between the isolation portions, and a control electrode laminated on the isolation portions and the floating electrodes are provided, and an interval between the adjacent floating electrodes is formed greater at the side away from the silicon substrate than at the silicon substrate side.

REFERENCES:
patent: 5973353 (1999-10-01), Yang et al.
patent: 6153469 (2000-11-01), Yun et al.
patent: 6483146 (2002-11-01), Lee et al.
patent: 6573139 (2003-06-01), Lee et al.
patent: 2001-160618 (2001-06-01), None

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