Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2011-03-22

2011-03-22

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000

Reexamination Certificate

active

07910979

ABSTRACT:
The invention provides a nonvolatile semiconductor memory device comprising a plurality of memory strings each including a plurality of electrically programmable memory cells connected in series. The memory string includes a semiconductor pillar, an insulator formed around the circumference of the semiconductor pillar, and first through nth electrodes to be turned into gate electrodes (n denotes a natural number equal to 2 or more) formed around the circumference of the insulator. It also includes interlayer electrodes formed in regions between the first through nth electrodes around the circumference of the insulator.

REFERENCES:
patent: 2005/0063237 (2005-03-01), Masuoka et al.
patent: 2007/0252201 (2007-11-01), Kito et al.
U.S. Appl. No. 12/013,672, filed Jan. 14, 2008, Yoshiaki Fukuzumi, et al.

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