Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2011-06-07

2011-06-07

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Read/write circuit

Simultaneous operations

C365S148000, C365S189011, C365S218000

Reexamination Certificate

active

07957203

ABSTRACT:
A nonvolatile semiconductor memory device comprises a cell array including plural MATs (unit cell arrays) arranged in matrix, each MAT containing a plurality of first lines, a plurality of second lines intersecting the plurality of first lines, and a plurality of memory cells connected at intersections of the first and second lines between both lines, each memory cell containing an electrically erasable programmable variable resistive element of which resistance is nonvolatilely stored as data; and a plurality of write/erase circuits connected to the MATs and operative to execute data write or erase to the memory cells inside the MATs in accordance with input data. A part of the plurality of write/erase circuits writes data to memory cells inside a corresponding MAT while another part of the plurality of write/erase circuits erases data from memory cells inside a corresponding MAT at the same time.

REFERENCES:
patent: 6618286 (2003-09-01), Kato et al.
patent: 6888773 (2005-05-01), Morimoto
patent: 7248494 (2007-07-01), Oh et al.
patent: 7535746 (2009-05-01), Kawazoe et al.
patent: 7649777 (2010-01-01), Ichige et al.

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2693346