Nonvolatile semiconductor memory device

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S158000

Reexamination Certificate

active

07978497

ABSTRACT:
A nonvolatile semiconductor memory device comprises a memory cell array including first and second mutually crossing lines and electrically erasable programmable memory cells arranged at intersections of the first and second lines, each memory cell containing a variable resistive element; a data write circuit operative to apply a voltage required for data write to the memory cell via the first and second lines; and a current limit circuit operative to limit the value of current flowing in the memory cell on the data write at a certain current limit value.

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