Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-07
2011-06-07
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29300, C257SE27103
Reexamination Certificate
active
07956408
ABSTRACT:
A nonvolatile semiconductor memory device relating to one embodiment of this invention includes a substrate, a plurality of memory strings formed on said substrate, said memory string having a first select gate transistor, a plurality of memory cells and a second select gate transistor, said first select gate transistor having a first pillar semiconductor, a first gate insulation layer formed around said first pillar semiconductor and a first gate electrode being formed around said first gate insulation layer; said memory cell having a second pillar semiconductor, a first insulation layer formed around said second pillar semiconductor, a storage layer formed around said first insulation layer, a second insulation layer formed around said storage layer and first to nth electrodes (n is a natural number 2 or more) being formed around said second insulation layer, said first to nth electrodes being spread in two dimensions respectively, said second select gate transistor having a third pillar semiconductor, a second gate insulation layer formed around said third pillar semiconductor and a second gate electrode being formed around said second gate insulation layer, and a channel region of at least either said first select gate transistor or said second select gate transistor formed by an opposite conductive type semiconductor to a source region and a drain region.
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Enda Toshiyuki
Izumida Takashi
Tanimoto Hirosyoshi
Dickey Thomas L
Erdem Fazli
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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