Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-28
2011-06-28
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27078
Reexamination Certificate
active
07968933
ABSTRACT:
A nonvolatile semiconductor memory device includes a tunnel insulating film, a floating gate electrode, an inter-electrode insulating film, and a control gate electrode. The tunnel insulating film is formed on a selected part of a surface of a semiconductor substrate. The floating gate electrode is formed on the tunnel insulating film. At least that interface region of the floating gate electrode, which is opposite to the substrate, is made of n-type Si or metal-based conductive material. The inter-electrode insulating film is formed on the floating gate electrode and made of high-permittivity material. The control gate electrode is formed on the inter-electrode insulating film. At least that interface region of the control gate electrode, which is on the side of the inter-electrode insulating film, is made of a p-type semiconductor layer containing at least one of Si and Ge.
REFERENCES:
patent: 5661056 (1997-08-01), Takeuchi
patent: 6020238 (2000-02-01), He et al.
patent: 6060360 (2000-05-01), Lin et al.
patent: 6803272 (2004-10-01), Halliyal et al.
patent: 2005/0145957 (2005-07-01), Ahn et al.
patent: 2006/0046522 (2006-03-01), Ahn et al.
patent: 5-206475 (1993-08-01), None
patent: 9-260517 (1997-10-01), None
patent: 10-189921 (1998-07-01), None
patent: 10-256400 (1998-09-01), None
patent: 2000-150680 (2000-05-01), None
patent: 2003-7861 (2003-01-01), None
patent: 2003-197785 (2003-07-01), None
patent: 2005-26590 (2005-01-01), None
Notice of Reasons for Rejection mailed by the Japanese Patent Office on Feb. 3, 2009, for Japanes Application No. 2005-236014, and English language translation thereof.
Kikuchi Shoko
Muraoka Koichi
Nishikawa Yukie
Nishino Hirotaka
Yasuda Naoki
Booth Richard A.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
LandOfFree
Nonvolatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2651010