Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2011-08-02

2011-08-02

Bryant, Kiesha R (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29309

Reexamination Certificate

active

07989876

ABSTRACT:
The present invention provides a nonvolatile semiconductor memory device including memory cells capable of electrically writing information, and each of the memory cells includes a first insulating film formed on the channel provided between source/drain diffusion layers, an electric charge accumulation layer formed on the first insulating film and is made of nitride or oxynitride containing at least one selected from Si, Ge, Ga, and Al, a donor layer containing n-type dopant impurity formed on the electric charge accumulation layer and is made of nitride or oxynitride containing at least one selected from among Si, Ge, Ga, and Al, a second insulating film formed on the donor layer, and a control gate electrode formed on the second insulating film.

REFERENCES:
patent: 5151758 (1992-09-01), Smith
patent: 5548139 (1996-08-01), Ando
patent: 6489628 (2002-12-01), Morizuka
patent: 6903407 (2005-06-01), Kang
patent: 7432156 (2008-10-01), Lee et al.
patent: 2003/0042558 (2003-03-01), Noguchi et al.
patent: 2003/0235080 (2003-12-01), Yaegashi et al.
patent: 2004/0037116 (2004-02-01), Kuo et al.
patent: 2005/0006696 (2005-01-01), Noguchi et al.
patent: 2005/0275343 (2005-12-01), Tanaka et al.
patent: 2005/0285180 (2005-12-01), Mitani et al.
patent: 2006/0291287 (2006-12-01), Furnemont
patent: 2007/0007583 (2007-01-01), Lee et al.
patent: 2007/0042547 (2007-02-01), Kikuchi et al.
patent: 2007/0108508 (2007-05-01), Lin et al.
patent: 2007/0132004 (2007-06-01), Yasuda et al.
patent: 2007/0215929 (2007-09-01), Yasuda
patent: 2007/0284646 (2007-12-01), Kikuchi
patent: 2008/0093661 (2008-04-01), Joo et al.
patent: 2004-55969 (2004-02-01), None
patent: 2004-363329 (2004-12-01), None
patent: 2005-12219 (2005-01-01), None
patent: 2005-340768 (2005-12-01), None
patent: 2006-13003 (2006-01-01), None
A Notification of Reasons for Rejection mailed on Dec. 2, 2008, from the Japanese Patent Office in counterpart Japanese Application No. No. 2006-257754, and an English language translation thereof.
A. Chin et al., “Low Voltage High Speed SiO2/AIGaN/AILaO3/TaN Memory with Good Retention,” IEDM Technical Digest, pp. 165-168 (2005).
T. Maeda et al., “Ge Metal-Insulator-Semiconductor Structures with Ge3N4Dielectrics by Direct Nitridation of Ge Substrates,” Appl. Phys. Lett., vol. 85, No. 15, pp. 3181-3183 (2004).
J. Goss et al., “Vacancy-Impurity Complexes and Limitations for Implantation Doping of Diamond,” Physical Review B, vol. 72, No. 3, pp. 035214-1-11 (2005).
F. Oba et al., “Effective Doping in Cubic Si3N4and Ge3N4: A First-Principles Study,” J. Am. Ceram. Soc., vol. 85, No. 1, pp. 97-100 (2002).
W. Götz et al., “Activation Energies of Si Donors in GaN,” Appl. Phys. Lett., vol. 68, No. 22, pp. 3144-3146 (1996).
A.-D. Li et al., “Characteristics of LaAIO3Gate Dielectrics on Si Grown by Metalorganic Chemical Vapor Deposition,” Appl. Phys. Lett., vol. 83, No. 17, pp. 3540-3542 (2003).
H.-P. Baldus et al., “Silicon Phosphorus Nitride, the First Ternary Compound in the Silicon-Phosphorus-Nitrogen System,” Chem. Mater., vol. 5, pp. 845-850 (1993).
R. Ohba, “Impact of Stoichiometry Control in Double Junction Memory on Future Scaling,” IEDM Tech. Dig., pp. 897-900 (2004).
R. Ohba, “35 nm Floating Gate Planar MOSFET Memory Using Double Junction Tunneling,” IEDM Tech. Dig., pp. 873-876 (2005).
E. Suzuki et al., “Traps Created at the Interface Between the Nitride and the Oxide on the Nitride by Thermal Oxidation,” Appl. Phys. Lett., vol. 42, No. 7, pp. 608-610 (1983).

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2633382