Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2011-03-01

2011-03-01

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S185200, C365S189020, C365S230020, C365S230060

Reexamination Certificate

active

07898889

ABSTRACT:
A memory includes first selective transistors connected between one end of cell strings and bit lines; second selective transistors connected between the other end of the cell strings and a cell source line; a dummy cell string; a first dummy selective transistor connected between one end of the dummy cell string and a dummy bit line and whose gate is connected to a first selective gate line; a second dummy selective transistor connected between the other end of the dummy cell string and the cell source line and whose gate is connected to a second selective gate line, wherein at a time of writing in a selected memory cell, a voltage of a first dummy bit line selected is driven to a different voltage from a voltage of an unselected bit line, and any of the dummy cell transistors connected to the first dummy bit line is written.

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