Nonvolatile semiconductor memory component

Details Nonvolatile semiconductor memory component Nonvolatile semiconductor memory component

1989-08-10

1991-05-28

Wojciechowicz, Edward J.

357 12, 357 236, H01L 2978

Patent

active

050198815

ABSTRACT:
The invention provides a nonvolatile semiconductor memory component comprising: field region of thick oxide, the first and second active regions surrounded with the field region, the first and second gate insulating layers on the first and second active regions, the first gate of a low resistance formed on the first and second gate insulating layer, the third insulating layer on the first gate of a low resistance the second gate of a low resistance formed on the third insulating layer, the channel region below the first gate insulating layer formed by the first gate, and the highly doped drain and source separated by channel region opposite to the type of the substrate. In addition, the process for forming the transistor with one channel and the substrate diffusion can be achieved on the semiconductor substrate or opposite type well formed on the semiconductor substrate. Programming at a low voltage may be possible and the reliability characteristics of the cell may be improved according to present invention.

REFERENCES:
patent: 4823316 (1989-04-01), Riva
patent: 4845538 (1989-07-01), Hazani
patent: 4894802 (1990-01-01), Hsia et al.

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