Nonvolatile semiconductor memory cell with select gate

Details Nonvolatile semiconductor memory cell with select gate Nonvolatile semiconductor memory cell with select gate

1998-03-31

2000-09-05

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, 36518518, H01L 29788

Patent

active

061147249

ABSTRACT:
An electrically erasable programmable read only memory (EEPROM) cell including a tunnel dielectric layer formed over a semiconductor substrate. The EEPROM cell may have a floating gate transistor and a select transistor. The floating gate transistor may have a floating gate formed over the tunnel dielectric and a control gate formed over the floating gate. The select transistor may have a first gate formed over the tunnel dielectric and a second gate formed over the first gate. The second gate may be electrically connected to the first gate.

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