Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-25
2007-12-25
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257SE21209, C257SE21422, C257SE29129, C257SE29165, C438S260000
Reexamination Certificate
active
11331228
ABSTRACT:
A stacked-gate structure includes a tunnel insulation film, a floating gate electrode, an inter-electrode insulation film and a control gate electrode, which are stacked on a semiconductor substrate. The inter-electrode insulation film has a three-layer structure that includes a first oxidant barrier layer, an intermediate insulation layer and a second oxidant barrier layer. Gate side-wall insulation films are formed on both side surfaces of the stacked-gate structure. The thickness of the gate side-wall insulation film increases, at a side portion of the floating gate electrode, from the inter-electrode insulation film side toward the tunnel insulation film side. The width of the floating gate electrode in a channel length direction decreases from the inter-electrode insulation film side toward the tunnel insulation film side.
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Notification of Reasons for Rejection dated Jan. 30, 2007, in Japanese Patent Application No. 2004-000518 and English language translation thereof.
Ho Tu-Tu
Kabushiki Kaisha Toshiba
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