Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-08
2005-11-08
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S298000
Reexamination Certificate
active
06963107
ABSTRACT:
A nonvolatile semiconductor memory apparatus capable of attaining a low voltage when writing data, wherein charge injection into an unnecessary portion is not performed when reading, and capable of unifying a threshold voltage level when erasing, comprising a first conductive type semiconductor region, two source/drain regions made by a second conductive type semiconductor, a plurality of dielectric films stacked on a first conductive type semiconductor region between the two source/drain regions, and a gate electrode; wherein the first conductive type semiconductor region between the two source/drain regions includes a first region wherein a channel is formed by an inversion layer of a minority carrier and a second region formed between the first region and a source/drain region on one side of the first region and having higher concentration than that of the first region.
REFERENCES:
patent: 4241424 (1980-12-01), Dickson et al.
patent: 5424567 (1995-06-01), Chen
patent: 5753958 (1998-05-01), Burr et al.
Nomoto Kazumasa
Satoh Shinji
Tomiie Hideto
Sonnenschein Nath & Rosenthal LLP
Wilson Allan R.
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