Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-02-17
1997-01-07
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257316, H01L 29788
Patent
active
055920039
ABSTRACT:
The promotion of reduction of the power source voltage for use in a nonvolatile semiconductor memory is attained by using a method wherein memory cells each of which includes a control gate having a floating gate above a channel region, and a source constituted by an N-type impurity diffusion layer enclosed with a high impurity concentrated P-type diffusion layer containing impurities the impurity concentration of which is higher than that of a P-type well are formed in double wells made up of an N-type well and the P-type well which are formed in a P-type silicon substrate, the electric potentials at the N-type well and the P-type well are controlled independently to each other to write data to the memory cell by utilizing the tunnel phenomenon, the electrical potential at the P-type well is made negative, and under this condition, a relatively low positive voltage and a high voltage are respectively applied to the control gate and the source and the hot electrons generated in the vicinity of the source are injected into the floating gate through the channel region by utilizing the tunnel phenomenon to erase the information stored in the memory cell.
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Sato Yasuo
Sawada Kikuzo
Bowers Courtney A.
Jackson Jerome
Nippon Steel Corporation
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