Nonvolatile semiconductor memory, and method of manufacturing th

Details Nonvolatile semiconductor memory, and method of manufacturing th Nonvolatile semiconductor memory, and method of manufacturing th

1996-10-01

1999-03-16

Booth, Richard A.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438592, H01L 218247

Patent

active

058829946

ABSTRACT:
A method of manufacturing the semiconductor memory comprises a plurality of steps. The steps include forming a first oxide film on a semiconductor substrate, forming a polysilicon electrode on the first oxide film by the sub-steps of forming a low impurity density polysilicon layer, forming a high impurity density polysilicon layer, and forming a low impurity density polysilicon layer in this order, and forming a second oxide film on the polysilicon electrode.

REFERENCES:
patent: 4249968 (1981-02-01), Gardiner et al.
patent: 5147813 (1992-09-01), Woo
patent: 5256894 (1993-10-01), Shino
patent: 5289026 (1994-02-01), Ong
patent: 5439838 (1995-08-01), Yang
patent: 5445982 (1995-08-01), Hwang
Wolf et al., "Silicon Processing for the VLSI Era Volume 1: Process Technology", Lattice Press, pp. 164-169 1986.

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory, and method of manufacturing th does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory, and method of manufacturing th, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory, and method of manufacturing th will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-817304