Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-02-26
2010-11-09
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257SE29264, C257SE29300, C257SE21409, C438S257000
Reexamination Certificate
active
07829950
ABSTRACT:
A nonvolatile semiconductor memory has a semiconductor substrate, a first insulating film formed on a channel region on a surface portion of the semiconductor substrate, a charge accumulating layer formed on the first insulating film, a second insulating film formed on the charge accumulating layer, a control gate electrode formed on the second insulating film, and a third insulating film including an Si—N bond that is formed on a bottom surface and side surfaces of the charge accumulating layer.
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Akahori et al.; “Nonvolatile Semiconductor Memory Device”; U.S. Appl. No. 11/870,793, filed Oct. 11, 2007.
Takeuchi et al; “Semiconductor Memory Device and Method for Manufacturing the Same”; U.S. Appl. No. 11/870,839, filed Oct. 11, 2007.
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Notification of Reasons for Rejection issued by the Korean Patent Office on Nov. 23, 2009, for Korean Patent Application No. 10-2008-0017327, and English-language translation thereof.
Akahori Hiroshi
Takeuchi Wakako
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Mandala Victor A
Moore Whitney
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