Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2011-08-02
2011-08-02
Yoha, Connie C (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S189150, C365S201000
Reexamination Certificate
active
07990778
ABSTRACT:
A nonvolatile semiconductor memory includes a nonvolatile memory array, a voltage generator circuit that generates a drive voltage which changes depending on a supply voltage and a trimming code, a control circuit that applies the generated drive voltage to the nonvolatile memory array, and a trimming code output circuit that outputs any one of plural trimming codes to the voltage generator circuit. The plural trimming codes include a test trimming code in addition to an appropriate trimming code for generating a desired drive voltage. The test trimming code is different from the appropriate trimming code, and used only in the test state. In the test state, the trimming code output circuit outputs the test trimming code to the voltage generator circuit, and the voltage generator circuit generates the drive voltage according to the test trimming code. In states other than the test state, the trimming code output circuit outputs the appropriate trimming code to the voltage generator circuit, and the voltage generator circuit generates the drive voltage according to the appropriate trimming code.
REFERENCES:
patent: 5777930 (1998-07-01), Sugiura et al.
patent: 6977849 (2005-12-01), Tomishima
patent: 7633815 (2009-12-01), Ch'ng et al.
patent: 2009/0323440 (2009-12-01), Soma
patent: 2000-173297 (2000-06-01), None
McGinn IP Law Group PLLC
Renesas Electronics Corporation
Yoha Connie C
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