Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-14
2011-06-14
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S390000, C257S411000, C257SE29165, C257SE29309
Reexamination Certificate
active
07960779
ABSTRACT:
A nonvolatile semiconductor memory of an aspect of the invention includes memory cells in the memory cell forming area, and select gate transistors in the select gate forming area. Each memory cell has two first diffusion layers formed in a semiconductor substrate, a first gate insulating film formed on the semiconductor substrate, a charge storage layer formed on the first gate insulating film, a first intermediate insulating film formed on the charge storage layer and a first gate electrode formed on the first intermediate insulating film. Each select gate transistor has two second diffusion layers formed in the semiconductor substrate, a second gate insulating film formed on the semiconductor substrate, a second intermediate insulating film formed in direct contact with the second gate insulating film and having the same structure as the first intermediate insulating film, and a second gate electrode formed on the second intermediate insulating film.
REFERENCES:
patent: 6750525 (2004-06-01), Yim et al.
patent: 6867453 (2005-03-01), Shin et al.
patent: 6946349 (2005-09-01), Lee et al.
patent: 7227786 (2007-06-01), Thomas
patent: 7341914 (2008-03-01), Prinz et al.
patent: 7547942 (2009-06-01), Jeon et al.
patent: 7547943 (2009-06-01), Cho et al.
patent: 7732856 (2010-06-01), Sim et al.
patent: 2005/0128816 (2005-06-01), Lee et al.
patent: 2005/0148138 (2005-07-01), Noda et al.
patent: 2007/0045716 (2007-03-01), Chen et al.
patent: 2007/0063264 (2007-03-01), Huang et al.
patent: 2007/0284645 (2007-12-01), Lee et al.
patent: 2008/0175049 (2008-07-01), Lin
patent: 2002-100686 (2002-04-01), None
patent: 2002-324860 (2002-11-01), None
patent: 2004-221589 (2004-08-01), None
patent: 2004-296683 (2004-10-01), None
patent: 2005-116551 (2005-04-01), None
patent: 2007-294935 (2007-11-01), None
U.S. Appl. No. 12/400,435, filed Mar. 9, 2009, Yaegashi.
U.S. Appl. No. 12/407,131, filed Mar. 19, 2009, Sakuma.
Office Action mailed on Aug. 31, 2010, in Japanese Patent Application No. 2008-048410 (with English Translation).
Okamura Takayuki
Toba Takayuki
Yabuki Moto
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Soward Ida M
LandOfFree
Nonvolatile semiconductor memory and manufacturing method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory and manufacturing method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory and manufacturing method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2619415