Nonvolatile semiconductor memory

Details Nonvolatile semiconductor memory Nonvolatile semiconductor memory

2006-10-17

2009-08-11

Le, Vu A (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185080

Reexamination Certificate

active

07573742

ABSTRACT:
A hot electron (BBHE) is generated close to a drain by tunneling between bands, and bit data writing is performed by injecting the hot electron into a charge storage layer. When Vg is a gate voltage, Vsub is a cell well voltage, Vs is a source voltage and Vd is a drain voltage, a relation of Vg>Vsub>Vs>Vd is satisfied, Vg−Vd is a value of a potential difference required for generating a tunnel current between the bands or higher, and Vsub−Vd is substantially equivalent to a barrier potential of the tunnel insulating film or higher.

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Natsuo Ajika, et al., Development of flash memory written at 100MB/s Enabling NOR-level Fast Readout, Nikkei Electronics, Jun. 11, 2006, Japan.

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