Nonvolatile semiconductor memory

Details Nonvolatile semiconductor memory Nonvolatile semiconductor memory

2008-07-29

2008-07-29

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257SE29129, C257SE29300

Reexamination Certificate

active

10983744

ABSTRACT:
A nonvolatile semiconductor memory on a semiconductor chip includes: a cell array region configured with a memory cell transistor having a first metallic salicide film, a first control gate electrode electrically coupled with the first metallic salicide film, and a floating gate electrode adjacent to the first control gate electrode; a high voltage circuit region including a high voltage transistor made of a second metallic salicide film, a first source region and a first drain region, and a first gate region arranged between the first source region and the first drain region; and a low voltage circuit region including a low voltage transistor made of a third metallic salicide film, a second source region and a second drain region electrically coupled with the third metallic salicide film, and a second gate region arranged between the second source region and the second drain region and is electrically coupled with the third metallic salicide film.

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