Nonvolatile semiconductor memory

Details Nonvolatile semiconductor memory Nonvolatile semiconductor memory

2007-09-11

2007-09-11

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000, C257S390000, C257SE27102, C257SE29309, C257SE29129

Reexamination Certificate

active

11076064

ABSTRACT:
A nonvolatile semiconductor memory device includes diffusion layers formed in a semiconductor substrate, a gate insulating film formed on at least a portion of a channel region between the diffusion layers in the semiconductor substrate, and a control gate formed on the gate insulating film. The nonvolatile semiconductor memory device also includes electric charge storage insulating films formed on side surfaces of the control gate, memory gates formed on side surfaces of the sidewall insulating films to be higher than the sidewall insulating film, and a silicide film formed to connect the memory gates and the control electrode.

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