Nonvolatile semiconductor memory

Details Nonvolatile semiconductor memory Nonvolatile semiconductor memory

1995-12-19

1997-04-29

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular connection

36518511, 36523004, 36518905, G11C 700

Patent

active

056255900

ABSTRACT:
A nonvolatile semiconductor memory according to the present invention includes a plurality of floating gate type memory cells arranged in rows and columns, a plurality of word lines, each word line being connected to the memory cells arranged in a given one of the rows, and a plurality of bit lines arranged in parallel to one another. Each bit line is connected to the memory cells arranged in a given one of the columns and the bit lines are divided into first bit lines and second bit lines which are arranged to alternate with one another. A page buffer is also included which has a first page buffer portion connected to the first bit lines extending in a first column direction and a second page buffer portion connected to the second bit lines extending in a second column direction, the first column direction being opposite to the second column direction. This construction allows for high integration density and reduced data loading cycle time.

REFERENCES:
patent: 4825098 (1989-04-01), Aoyama
patent: 4961171 (1990-10-01), Pinkham et al.
patent: 5416742 (1995-05-01), Takada

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