Nonvolatile semiconductor memory

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

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C365S185090

Reexamination Certificate

active

07379359

ABSTRACT:
A regular sense amplifier and a defect-information sense amplifier are provided for each regular sector and each defect-information sector, respectively. This can prevent an excess load from being applied to a read path, and minimize the access time. A write amplifier is provided in common to the regular sector, the reference sector, and the defect-information sector. Generally, the write operation time of a nonvolatile semiconductor memory is long, so that an increase in a wiring load on a data transmission path and an increase in a load on a switch do not affect the write operation time much. As a result, the circuit scale can be made smaller without lengthening the read access time, and thereby the fabrication cost of the nonvolatile semiconductor memory can be reduced.

REFERENCES:
patent: 5257229 (1993-10-01), McClure et al.
patent: 5293348 (1994-03-01), Abe
patent: 6002620 (1999-12-01), Tran
patent: 6992937 (2006-01-01), Tran et al.
patent: 7054206 (2006-05-01), Tellier
patent: 11-339488 (1999-12-01), None
patent: 2000-207894 (2000-07-01), None

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