Nonvolatile semiconductor memory

Details Nonvolatile semiconductor memory Nonvolatile semiconductor memory

1995-06-05

1996-07-16

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

36518521, 327 51, G11C 700

Patent

active

055373569

ABSTRACT:
When a current flows through a selected memory cell transistor at the time of data reading, the gate voltage of an n-channel MOS transistor, which makes up the current flowing through the load, rises. Thus, when a current flows through a selected memory cell transistor at the time of data reading, the current through the load is increased so that the time required for data reading when the current flows through the selected memory cell transistor can be shortened and the data reading can be effected at a high speed.

REFERENCES:
patent: 4585955 (1986-04-01), Uchida
patent: 4691304 (1987-09-01), Hori et al.
patent: 4875188 (1989-10-01), Jungroth
patent: 5012445 (1991-04-01), Kazuaki et al.
patent: 5046052 (1991-09-01), Miyaji et al.
patent: 5072134 (1991-12-01), Min
patent: 5075890 (1991-12-01), Itoh et al.
patent: 5077691 (1991-12-01), Haddad et al.
patent: 5153452 (1992-10-01), Iwamura et al.
patent: 5247480 (1993-09-01), Itoh et al.
patent: 5247483 (1993-09-01), Okamoto
patent: 5258669 (1993-11-01), Nakashima
patent: 5341329 (1994-08-01), Takebuchi

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1789909