Nonvolatile semiconductor memory

Details Nonvolatile semiconductor memory Nonvolatile semiconductor memory

1987-05-15

1989-04-25

Carroll, J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 45, 357 54, 357 59, 365185, H01L 2978, H01L 2934, H01L 2720

Patent

active

048252719

ABSTRACT:
Disclosed is a nonvolatile semiconductor memory having a high access speed and high reliability. The memory includes a source diffusion region extending in one direction, a pair of first word lines arranged in parallel with the source diffusion region, such that the source diffusion region is interposed therebetween, drain diffusion regions disposed to face the source diffusion region, with the first word lines interposed therebetween, bit lines electrically connected to the drain diffusion regions and arranged to cross the first word lines, a channel region formed below each of the first word lines and positioned between the source diffusion region and the drain diffusion region, a floating gate electrode formed in an electrically floating manner above the channel region and below one of the pair of the first word lines, and a second word line formed above the source region and positioned between and electrically connected to the pair of first word lines.

REFERENCES:
patent: 4378628 (1983-04-01), Levinstein et al.
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patent: 4528744 (1985-07-01), Shibata
patent: 4581622 (1986-04-01), Takasaki et al.
patent: 4608385 (1986-08-01), Keshtboyd
patent: 4635342 (1987-01-01), Lien et al.
S. P. Murarka et al., "Refractory Silicides of Titanium and Tantalum for Low-Resistivity Gates and Interconnects", IEEE Transactions on Electron Devices, vol. ED-27, No. 8, pp. 1409-1417, Aug. 1980.
F. Mohammadi, "Silicides for Interconnection Technology", Solid State Technology, pp. 65-72, 1981.

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