Nonvolatile semiconductor device and memory system including...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S185030, C365S185170, C365S185180, C365S185290, C365S185330

Reexamination Certificate

active

08036043

ABSTRACT:
A nonvolatile semiconductor memory device including a vertical array structure comprised of bit lines and source lines arranged in the same direction as the bit lines, each source lines corresponding to the bit lines and memory cell strings vertically formed between each pair of the bit lines and source lines. Multiple strings of memory cells can be stacked in the vertical direction, and adjacent memory cell strings may share bit line or source line.

REFERENCES:
patent: 5677556 (1997-10-01), Endoh
patent: 6118696 (2000-09-01), Choi
patent: 6385088 (2002-05-01), Arakawa et al.
patent: 7332766 (2008-02-01), Hasegawa et al.
patent: 7457156 (2008-11-01), Nazarian
patent: 7848145 (2010-12-01), Mokhlesi et al.
patent: 2007/0252201 (2007-11-01), Kito et al.
patent: 2008/0031048 (2008-02-01), Jeong et al.
patent: 2008/0067554 (2008-03-01), Jeong et al.
patent: 2007-317874 (2007-12-01), None
patent: 1020080012667 (2008-02-01), None
patent: 1020080024971 (2008-03-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Nonvolatile semiconductor device and memory system including... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor device and memory system including..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor device and memory system including... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4261791

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.