Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2009-06-08
2011-10-11
Yoha, Connie (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030, C365S185170, C365S185180, C365S185290, C365S185330
Reexamination Certificate
active
08036043
ABSTRACT:
A nonvolatile semiconductor memory device including a vertical array structure comprised of bit lines and source lines arranged in the same direction as the bit lines, each source lines corresponding to the bit lines and memory cell strings vertically formed between each pair of the bit lines and source lines. Multiple strings of memory cells can be stacked in the vertical direction, and adjacent memory cell strings may share bit line or source line.
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Lee Woon-Kyung
Oh Dong-Yean
F. Chau & Associates LLC
Samsung Electronics Co,. Ltd.
Yoha Connie
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