Nonvolatile reprogrammable interconnect cell with FN tunneling a

Details Nonvolatile reprogrammable interconnect cell with FN tunneling a Nonvolatile reprogrammable interconnect cell with FN tunneling a

1995-07-28

1997-05-27

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257321, 3651851, 36518528, H01L 2976

Patent

active

056335180

ABSTRACT:
An array of programmable interconnect cells, each cell having a floating gate as the gate of an MOS switch transistor which programmably connect or disconnects nodes, is used in an FPGA. The floating gate of each cell, which is capacitively coupled to a control gate, is programmed by Fowler-Nordheim tunneling through an tunneling oxide above a programming/erase line in the integrated circuit substrate. Contiguous and parallel to the programming/erase line is at least one tunneling control line which forms a PN junction in close proximity to the programming/erase line region under the tunneling oxide. Under a reverse bias, a deep charge depletion region is formed in the programming/erase line region to block tunneling. In this manner, a selected cell can be programmed/erased, while the non-selected cells are not.

REFERENCES:
patent: 4672409 (1987-06-01), Takei et al.
patent: 5019879 (1991-05-01), Chiu
patent: 5021848 (1991-06-01), Chiu
patent: 5225362 (1993-07-01), Bergemont

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