Static information storage and retrieval – Systems using particular element – Capacitors
Patent
1991-11-26
1995-11-07
Nelms, David C.
Static information storage and retrieval
Systems using particular element
Capacitors
365180, 365177, 257 77, G11C 11401
Patent
active
054652499
ABSTRACT:
A random access memory (RAM) cell in 6H-SiC having storage times when all bias is removed long enough to be considered nonvolatile. The nonvolatile random access memory (NVRAM) cell comprises a bit line, a charge storage device in silicon carbide, and a transistor in silicon carbide connecting the charge storage device to the bit line. The bipolar NVRAM cell has a bipolar transistor with a base region, an emitter region, and a floating collector region, wherein the charge storage device in the bipolar NVRAM is a p-n junction adjacent the floating collector region of the cell. The metal-oxide-semiconductor (MOS) NVRAM has a MOS field effect transistor (MOSFET) with a channel region, a source region, and a drain region, wherein the charge storage device in the MOS NVRAM is a MOS capacitor adjacent the drain region of the MOSFET.
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Carter, Jr. Calvin H.
Cooper, Jr. James A.
Palmour John W.
Cree Research Inc.
Nelms David C.
Purdue Research Foundation
Tran Andrew Q.
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