Nonvolatile random access memory

Details Nonvolatile random access memory Nonvolatile random access memory

1992-08-05

1994-03-15

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Hall effect

365 9, 365 14, 365171, 365173, G11C 1118, G11C 11155

Patent

active

052950972

ABSTRACT:
A nonvolatile random access memory is disclosed having a substrate (50) carrying separate magnetically polarizable domains (19) each surrounded by a full write loop member (18) and arranged to penetrate the Hall channel (36) of a dual drain FET (16) with its residual magnetic field. The domains are organized in word rows and bit columns, are each written to by a single full write current through the surrounding loop member and each read by a comparator connected to the FET drains (42, 42'). The memory can be fabricated in a variety of forms (e.g. a planar card).

REFERENCES:
patent: 4360899 (1982-11-01), Dimyan et al.
patent: 5068826 (1991-11-01), Matthews

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