Nonvolatile NOR two-transistor semiconductor memory cell and...

Details Nonvolatile NOR two-transistor semiconductor memory cell and... Nonvolatile NOR two-transistor semiconductor memory cell and...

2005-01-18

2005-01-18

Lebentritt, Michael S. (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S231000, C257S259000, C257S314000, C257S315000, C257S390000

Reexamination Certificate

active

06844603

ABSTRACT:
The invention relates to a nonvolatile NOR two-transistor semiconductor memory cell, an associated semiconductor memory device and a method for the fabrication thereof, in which one-transistor memory cells are located in an active region formed in annular fashion and are driven via associated word lines. In this case, the source regions of the one-transistor memory cells are connected via a source line, while the drain regions are connected via corresponding drain lines. A reduced space requirement for the two-transistor semiconductor memory cell is obtained in particular on account of the annular structure of the active regions.

REFERENCES:
patent: 4198649 (1980-04-01), Berry
patent: 5610858 (1997-03-01), Iwahashi
patent: 5867429 (1999-02-01), Chen et al.
patent: 6084274 (2000-07-01), Mukai et al.
patent: 6212102 (2001-04-01), Georgakos et al.
patent: 6291853 (2001-09-01), Io
patent: 9919880 (1999-04-01), None

Affiliated with

Also associated with

Rating

Nonvolatile NOR two-transistor semiconductor memory cell and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile NOR two-transistor semiconductor memory cell and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile NOR two-transistor semiconductor memory cell and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3374222