Nonvolatile nanochannel memory device using mesoporous material

Details Nonvolatile nanochannel memory device using mesoporous material Nonvolatile nanochannel memory device using mesoporous material

2005-09-29

2009-11-03

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S005000, C257SE29002, C438S102000, C438S103000

Reexamination Certificate

active

07612358

ABSTRACT:
A nonvolatile nanochannel memory device using a mesoporous material. Specifically, a memory device is composed of a mesoporous material that is able to form nanochannels, in which a memory layer having metal nanoparticles or metal ions fed into the nanochannels is disposed between an upper electrode and a lower electrode. Thus, the memory device has high processability, and manifests excellent reproducibility and uniform performance.

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Office Action dated May 9, 2008 from the Chinese Patent Office in a corresponding application (8 pages), including an English translation (7 pages).

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