Nonvolatile NAND-type memory devices including charge...

Details Nonvolatile NAND-type memory devices including charge... Nonvolatile NAND-type memory devices including charge...

2009-11-13

2011-11-22

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185020, C365S185050

Reexamination Certificate

active

08064259

ABSTRACT:
A nonvolatile memory device includes a word line group including a plurality of middle word lines and an edge word line having charge storage patterns on a substrate. A peripheral line is disposed on one side of the word line group so that the edge word line is between the peripheral word line and the middle word lines. The peripheral line includes an insulating layer and a gate electrode. Charge storage patterns of the middle and edge word lines are separated from each other, and a charge storage pattern of the edge word line extends on one side to be connected to the insulating layer of the peripheral line. Methods of forming nonvolatile memory devices are also disclosed.

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