Nonvolatile memory with backplate

Details Nonvolatile memory with backplate Nonvolatile memory with backplate

2007-05-15

2009-12-29

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S390000

Reexamination Certificate

active

07638836

ABSTRACT:
The present invention provides a non-volatile memory string having serially connected dual-gate devices, in which a first gate dielectric layer adjacent a first gate electrode layer in each dual-gate device is charge-storing and in which the second gate electrode adjacent a non-charge storing gate dielectric layer are connected in common. In one implementation, the second gate electrodes of the dual-gate devices in the memory string are provided by a continuous layer of doped polysilicon, tungsten, tantalum nitride, tungsten nitride or any combination of two or more of these conductors.

REFERENCES:
patent: 6054734 (2000-04-01), Aozasa et al.
patent: 6901006 (2005-05-01), Kobayashi et al.
patent: 7180135 (2007-02-01), Ioannou et al.
patent: 7339821 (2008-03-01), Walker
patent: 7410845 (2008-08-01), Walker
patent: 2004/0069990 (2004-04-01), Mahajani et al.
patent: 2004/0125629 (2004-07-01), Scheuerlein et al.
patent: 2005/0079675 (2005-04-01), Ilkbahar et al.
patent: 2005/0128807 (2005-06-01), Chen et al.
patent: 2006/0138519 (2006-06-01), Kang et al.
patent: 2007/0029618 (2007-02-01), Walker
patent: 2007/0126033 (2007-06-01), Walker et al.

Affiliated with

Also associated with

Rating

Nonvolatile memory with backplate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile memory with backplate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory with backplate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4074126