Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2007-03-01
2008-11-11
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S189070, C365S189090
Reexamination Certificate
active
07450451
ABSTRACT:
A nonvolatile memory system includes a drive voltage generator to generate a drive voltage on the basis of a power supply voltage; a plurality of normal memory cells serving as a nonvolatile memory storing data by accumulating charge of a polarity according to the data to be stored in a floating gate at a level according to the drive voltage generated by the drive voltage generator, the data being written in or read from the nonvolatile memory; a minimum voltage detecting memory cell serving as a nonvolatile memory in which charge of a level to cause a read error when the power supply voltage is equal to or lower than a minimum voltage of predetermined operation guarantee is accumulated in a floating gate; and a controller to output a read result of the normal memory cells if no read error occurs in a reading operation in the minimum voltage detecting memory cell.
REFERENCES:
patent: 5745414 (1998-04-01), Engh et al.
patent: 5754470 (1998-05-01), Engh et al.
patent: 6134148 (2000-10-01), Kawahara et al.
Frommer William S.
Frommer & Lawrence & Haug LLP
Nguyen Tuan T.
Sony Corporation
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