Nonvolatile memory sensing system

Static information storage and retrieval – Read/write circuit – Differential sensing

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365203, 365218, G11C 1140

Patent

active

044344791

ABSTRACT:
A sensing system for a nonvolatile memory transistor array employs reference transistors which are substantially identical to the memory transistors within the array and employs means to program the threshold voltage levels of the reference transistors to a lower level than that of the memory transistors within the array such that the changes in the electrical characteristics of both the memory and the reference transistors are proportional over time, the system thereby being rendered self-tracking.

REFERENCES:
patent: 4376987 (1983-03-01), Hsia

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