Nonvolatile memory programmble by a heat induced chemical...

Details Nonvolatile memory programmble by a heat induced chemical... Nonvolatile memory programmble by a heat induced chemical...

2005-03-29

2005-03-29

Lebentritt, Michael S. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Electrochemical

C365S185280

Reexamination Certificate

active

06873541

ABSTRACT:
A nonvolatile memory cell occupying a minimum chip area is provided with a cell structure that includes two or more base materials being programmable by a heat induced chemical reaction to form a layer or layers of alloy. The formation of alloy results in a change in resistance of the cell structure so that one or more programmed states are determined. A semiconductor memory constructed by a large number of the nonvolatile memory cells can be obtained in a compact manner with simple and as few as possible steps. This process vertically stacked layers, and this semiconductor memory is thus easily to be combined with other integrated circuits on a single chip.

REFERENCES:
patent: 6687156 (2004-02-01), Kobayashi et al.
patent: 6797566 (2004-09-01), Kobayashi et al.
patent: 20020066921 (2002-06-01), Sitaram et al.
patent: 20020191458 (2002-12-01), Kobayashi et al.

Affiliated with

Also associated with

Rating

Nonvolatile memory programmble by a heat induced chemical... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile memory programmble by a heat induced chemical..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory programmble by a heat induced chemical... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3432592