Nonvolatile memory including a verify circuit

Static information storage and retrieval – Read/write circuit – Testing

Reexamination Certificate

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C365S096000, C365S189050, C365S189070, C365S225700

Reexamination Certificate

active

11191973

ABSTRACT:
A semiconductor device includes a first nonvolatile memory element group which includes a plurality of first nonvolatile memory elements programmed with data by electrically and irreversibly varying device characteristics, a verify circuit which detects a defective first nonvolatile memory element in the first nonvolatile memory element group, and a second nonvolatile memory element group which includes a plurality of second nonvolatile memory elements programmed with data by electrically and irreversibly varying device characteristics and which stores address data to rescue the defective first nonvolatile memory element.

REFERENCES:
patent: 6639863 (2003-10-01), Imamura et al.
patent: 6985395 (2006-01-01), Yoshimatsu et al.
patent: 6992945 (2006-01-01), Otsuka
patent: 7085181 (2006-08-01), Otsuka
patent: 2005/0041507 (2005-02-01), Otsuka
patent: 2006/0197178 (2006-09-01), Chung
patent: 2001-35185 (2001-02-01), None
patent: 2005-63535 (2005-03-01), None
Fairchild Semiconductor. MM74HC138 (3 to 8 line decoder). Feb. 1999. pp. 1-7.
U.S. Appl. No. 10/885,718, filed Jul. 8, 2004, Nobuaki Otsuka.

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