Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2007-12-25
2007-12-25
Nguyen, Van Thu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S096000, C365S189050, C365S189070, C365S225700
Reexamination Certificate
active
11191973
ABSTRACT:
A semiconductor device includes a first nonvolatile memory element group which includes a plurality of first nonvolatile memory elements programmed with data by electrically and irreversibly varying device characteristics, a verify circuit which detects a defective first nonvolatile memory element in the first nonvolatile memory element group, and a second nonvolatile memory element group which includes a plurality of second nonvolatile memory elements programmed with data by electrically and irreversibly varying device characteristics and which stores address data to rescue the defective first nonvolatile memory element.
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Kabushiki Kaisha Toshiba
Nguyen Van Thu
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Sofocleous Alexander
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