Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2008-05-06
2008-05-06
Pham, Ly Duy (Department: 2827)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S185210, C365S185250, C365S189050, C365S196000, C365S203000
Reexamination Certificate
active
11420558
ABSTRACT:
A memory comprises a sense amplifier for sensing a logic state of a selected bitline. The sense amplifier includes a first precharge circuit, a current-to-voltage converter, a latch circuit, and a second precharge circuit. The first precharge circuit is for precharging a selected bitline to a first predetermined voltage in response to a first precharge signal. The current-to-voltage converter has a current input coupled to the selected bitline, and a voltage output. A latch circuit has a storage node coupled to the voltage output of the current-to-voltage converter. The second precharge circuit is for precharging the storage node of the latch circuit to a second predetermined voltage in response to a second precharge signal.
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Chiu Joanna G.
Freescale Semiconductor Inc.
Hill Daniel D.
Pham Ly Duy
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