Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2011-06-21
2011-06-21
Nguyen, Tuan T (Department: 2824)
Static information storage and retrieval
Systems using particular element
Resistive
C365S100000, C365S189011
Reexamination Certificate
active
07965539
ABSTRACT:
A nonvolatile memory element (101) of the present invention includes a resistance variable layer (112) which intervenes between a first electrode (111) and a second electrode (113) and is configured to include at least an oxide of a metal element of VI group, V group or VI group, and when an electric pulse of a specific voltage is applied between the first voltage (111) and the second voltage (113), the resistance variable layer is turned to have a first high-resistance state or a second high-resistance state in which its resistance value is a high-resistance value RH, or a low-resistance state in which its resistance value is a low-resistance value RL.
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Zhuang, W.W., et al., Novell Colossal Magnetoresistive Thin Film Nonvolatile Resistance Random Access Memory (RRAM), Int. Electron Devices Meet., 2002, pp. 193-196.
Fujii Satoru
Muraoka Shunsaku
Osano Koichi
Shimakawa Kazuhiko
Le Toan
McDermott Will & Emery LLP
Nguyen Tuan T
Panasonic Corporation
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