Nonvolatile memory element

Details Nonvolatile memory element Nonvolatile memory element

2006-03-23

2009-08-25

Pert, Evan (Department: 2826)

Static information storage and retrieval

Systems using particular element

Resistive

C365S158000, C257SE29323, C257S004000

Reexamination Certificate

active

07580276

ABSTRACT:
A nonvolatile memory element in which Rb1-yMbyMnO3having higher insulation properties than Ra1-xMaxMnO3is inserted between the Ra1-xMaxMnO3and a metal having a shallow work function or a low electronegativity in order to improve resistance change properties and switching properties and to control the resistance change properties. (In the formulas, Ra and Rb represent rare earth elements and are solid solutions of one or more types of rare earth elements. Average ionic radius of the Rb is smaller than that of the Ra. Ma and Mb represent alkaline earth metals and are solid solutions of one or more types of alkaline earth metals. 0<x, y<1).

REFERENCES:
patent: 5792569 (1998-08-01), Sun et al.
patent: 6166947 (2000-12-01), Asamitsu et al.
patent: 6753561 (2004-06-01), Rinerson et al.
patent: 6965137 (2005-11-01), Kinney et al.
patent: 2003/0148545 (2003-08-01), Zhuang et al.
patent: 2003/0219534 (2003-11-01), Zhuang et al.
patent: 2004/0095689 (2004-05-01), Pan et al.
patent: 2004/0165428 (2004-08-01), Odagawa et al.
patent: 2005/0167699 (2005-08-01), Sugita et al.
patent: 2007/0058302 (2007-03-01), Tokura et al.
patent: 2007/0212572 (2007-09-01), Tokura et al.
patent: 1 335 417 (2003-08-01), None
patent: 1 498 952 (2005-01-01), None
patent: 2004-241396 (2004-08-01), None
patent: 2004-281988 (2004-10-01), None
patent: 2005-72436 (2005-03-01), None
patent: 2004-059745 (2004-07-01), None
patent: 2005/041303 (2005-05-01), None
Tulina, et al.—“Reversible electrical switching at the Bi2Sr2CaCu2O8+ysurface in the normal metal—Bi2Sr2CaCu2O8+y single crystal heterojunction”—Physica C (2001), pp. 23-30.
U.S. Appl. No. 11/886,776, filed Sep. 20, 2007 entitled “Nonvolatile Memory Element”.
U.S. Appl. No. 11/909,340, filed May 30, 2005.
International Search Report mailed Jun. 20, 2006 (Japanese and English text).
Baikalov et al.: “Field-driven hysteretic and reversible resistive switch at the Ag-Pr0.7Ca0.3MnO3interface,”Applied Physics Letters,vol. 83, No. 5, Aug. 4, 2003, pp. 957-959.
Tsui et al.: “Field-induced resistive switching in metal-oxide interfaces,”Applied Physics Letters,vol. 85, No. 2, Jul. 12, 2004, pp. 317-319.
Sawa et al.: “Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr0.uCa0.3MnO3interface,”Applied Physics Letters,vol. 85, No. 18, Nov. 1, 2004, pp. 4073-4075.
Tomioka et al.: “Critical control of competition between metallic ferromagnetism and charge/orbital correlation in single crystals of perovskite manganties,”Physical Review,B (2003) pp. 68 094417-1—68 094417-7.

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