Nonvolatile memory element

Details Nonvolatile memory element Nonvolatile memory element

2007-07-02

2008-12-16

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S324000, C257SE29300

Reexamination Certificate

active

07465984

ABSTRACT:
A nonvolatile memory element includes a laminated gate provided above a semiconductor substrate with a tunnel insulating film disposed therebetween and having a floating gate electrode, a gate-gate insulating film and a control gate electrode sequentially stacked. The gate-gate insulating film includes a first silicon oxide film, a first aluminum oxide film having hafnium added thereto, a second aluminum oxide film, a third aluminum oxide film having hafnium added thereto and a second silicon oxide film sequentially stacked.

REFERENCES:
patent: 7368780 (2008-05-01), Tanaka et al.
patent: 2005/0266638 (2005-12-01), Cho et al.
patent: 2006/0054957 (2006-03-01), Ozawa et al.
patent: 2006/0081916 (2006-04-01), Sohn et al.
patent: 2006/0094188 (2006-05-01), Kim et al.
patent: 2005-217409 (2005-08-01), None
patent: 10-2005-0113887 (2005-12-01), None

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