Static information storage and retrieval – Analog storage systems – Resistive
Reexamination Certificate
2008-07-08
2008-07-08
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Analog storage systems
Resistive
C365S100000, C365S148000
Reexamination Certificate
active
07397681
ABSTRACT:
Phase-changeable random access memory (PRAM) devices include a plurality of rows and columns of PRAM memory cells therein and at least one local bit line electrically coupled to a column of the PRAM memory cells. First and second bit line selection circuits are provided to increase the rate at which the at least one local bit line can be accessed and driven with a bit line signal. These first and second bit line selection circuits are configured to electrically connect first and second ends of the at least one local bit line to a global bit line during an operation to read data from a selected one of the PRAM memory cells in the column.
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Cho Beak-hyung
Cho Woo-Yeong
Kim Du-Eung
Kwak Choong-Keun
Oh Hyung-Rok
Hoang Huan
Lappas Jason
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
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