Nonvolatile memory devices and methods of fabricating the same

Details Nonvolatile memory devices and methods of fabricating the same Nonvolatile memory devices and methods of fabricating the same

2011-06-07

2011-06-07

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S238000, C438S240000, C257SE21009

Reexamination Certificate

active

07955869

ABSTRACT:
Nonvolatile memory devices and methods of fabricating the same are provided. In some embodiments, a nonvolatile memory device includes a lower conductive member formed on an upper part of or inside a substrate, a ferroelectric organic layer formed on the lower conductive member, a protective layer formed on the ferroelectric organic layer, and an upper conductive member formed on the protective layer to cross the lower conductive member.

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