Nonvolatile memory devices and method of manufacturing the same

Details Nonvolatile memory devices and method of manufacturing the same Nonvolatile memory devices and method of manufacturing the same

2011-06-07

2011-06-07

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S005000, C257SE31029, C257SE45002, C365S148000, C365S163000

Reexamination Certificate

active

07956343

ABSTRACT:
Example embodiments provide a nonvolatile memory device using resistive elements. The nonvolatile memory device may include a semiconductor substrate, a plurality of variable resistance patterns on the semiconductor substrate, and a plurality of heat sink patterns that are level with the variable resistance patterns and coupled to a ground voltage.

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Notice of Allowance dated Jan. 16, 2008 in corresponding Korean Application No. 10-2007-0010703.

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