Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-03-21
2010-11-23
Nguyen, Viet Q (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185260, C365S189090
Reexamination Certificate
active
07839694
ABSTRACT:
Methods of reading memory cell data and nonvolatile memory devices, which apply a low voltage to memory cells adjacent to a memory cell from which data may be read are provided. Methods of reading memory cell data of nonvolatile memory device include applying a first voltage to a control gate of a read memory cell from among the plurality of memory cells, applying a third voltage to control gates of memory cell adjacent to the read memory cell, and applying a second voltage to control gates of memory cells other than the read memory cell and the adjacent memory cells.
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Hyun Jae-woong
Jin Young-gu
Joe In-sung
Park Yoon-dong
Harness & Dickey & Pierce P.L.C.
Nguyen Viet Q
Samsung Electronics Co,. Ltd.
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