Nonvolatile memory devices and data reading methods

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185180, C365S185260, C365S189090

Reexamination Certificate

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07839694

ABSTRACT:
Methods of reading memory cell data and nonvolatile memory devices, which apply a low voltage to memory cells adjacent to a memory cell from which data may be read are provided. Methods of reading memory cell data of nonvolatile memory device include applying a first voltage to a control gate of a read memory cell from among the plurality of memory cells, applying a third voltage to control gates of memory cell adjacent to the read memory cell, and applying a second voltage to control gates of memory cells other than the read memory cell and the adjacent memory cells.

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