Nonvolatile memory devices

Details Nonvolatile memory devices Nonvolatile memory devices

2006-04-13

2009-10-20

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C438S210000, C438S211000, C257S315000

Reexamination Certificate

active

07605473

ABSTRACT:
Methods of fabricating nonvolatile memory devices are provided. An isolation layer is formed on a substrate. The substrate has a memory region and a well contact region and the isolation layer defines an active region of the substrate. A gate insulating layer is formed on the active region. The gate insulating layer is patterned to define an opening therein. The opening exposes at least a portion of the well contact region of the substrate and acts as a charge pathway for charges generated during a subsequent etch of the isolation layer. Related memory device are also provided.

REFERENCES:
patent: 5364817 (1994-11-01), Lur et al.
patent: 5545575 (1996-08-01), Cheng et al.
patent: 6090667 (2000-07-01), Hara

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