Nonvolatile memory device with write error suppressed in...

Details Nonvolatile memory device with write error suppressed in... Nonvolatile memory device with write error suppressed in...

2008-07-01

2008-07-01

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S173000

Reexamination Certificate

active

11582983

ABSTRACT:
A data write current from a pinned layer to a free layer is larger than a data write current from the free layer to the pinned layer. A data read current is smaller in value than the data write current. In the case where a difference in data read current between a high-resistance state and a low-resistance state is relatively small, a sense amplifier is connected so that the data read current flows from the pinned layer to the free layer, namely from a source line to a bit line.

REFERENCES:
patent: 6714444 (2004-03-01), Huai et al.
patent: 6788568 (2004-09-01), Hidaka
patent: 6839272 (2005-01-01), Ooishi
patent: 6950335 (2005-09-01), Dieny et al.
patent: 2004-111904 (2004-04-01), None
patent: 2005-11907 (2005-01-01), None
patent: 2005-92912 (2005-04-01), None
Stuart S.P. Parkin, et al., “Giant tunneling magnetoresistance at room temperature with MgO (100) tunnel barriers,” Nature Materials, Oct. 31, 2004, pp. 1-6, Nature Publishing Group.

Affiliated with

Also associated with

Rating

Nonvolatile memory device with write error suppressed in... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile memory device with write error suppressed in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory device with write error suppressed in... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3933991