Nonvolatile memory device with variable resistance element

Details Nonvolatile memory device with variable resistance element Nonvolatile memory device with variable resistance element

2006-11-28

2006-11-28

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07142447

ABSTRACT:
A magnetic memory device includes a plurality of variable resistance elements arranged in parallel between a first and second nodes and having resistance values which vary depending on data stored in the elements, a selection transistor connected to the first node to perform selection on the plurality of variable resistance elements, and a bit line connected to the second node. A plurality of current paths including the variable resistance elements between the first and second nodes have different resistance values.

REFERENCES:
patent: 6795334 (2004-09-01), Iwata et al.
patent: 6826076 (2004-11-01), Asano et al.
patent: 6944048 (2005-09-01), Iwata
patent: 2003-249072 (2003-09-01), None

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