Nonvolatile memory device with nano gap electrode

Details Nonvolatile memory device with nano gap electrode Nonvolatile memory device with nano gap electrode

2011-03-08

2011-03-08

Ha, Nathan W (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27098

Reexamination Certificate

active

07902586

ABSTRACT:
A non-volatile memory device100contains: an insulating substrate10; a first electrode20provided on the insulating substrate10; a second electrode30provided on the insulating substrate10; and a gap40set between the first electrode20and the second electrode30, in which a distance G between the first electrode20and the second electrode30is: 0 nm<G≦50 nm.

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